Search results for "Ideality factor"
showing 3 items of 3 documents
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
2016
Contacts with MoS2 are currently the object of many investigations, since current injection through metal/MoS2 interfaces represents one of the limiting factors to the performance of MoS2 thin film transistors. In this paper, we employed conductive atomic force microscopy (CAFM) to investigate the current injection mechanisms from a nanometric contact (a Pt coated tip) to the surface of MoS2 thin films exfoliated on SiO2. The analysis of local current-voltage (I-V) characteristics on a large array of tip positions provided high spatial resolution information on the lateral homogeneity of the tip/MoS2 Schottky barrier Phi(B) and of the ideality factor n. From the histograms of the measured P…
Polymer/metal hybrid multilayers modified Schottky devices
2013
Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …
On the Variability of the Temperature Coefficients of mc-Si Solar Cells with Irradiance
2016
Abstract The temperature sensitivity of silicon solar cells is in general assumed to be constant with irradiance in PV forecasting models, although it has been demonstrated experimentally that this is not true. In this study a theoretical model is established that describes the variation of the temperature coefficients of a silicon solar cell as a function of the irradiance. It is shown that the temperature sensitivity of the solar cell efficiency is decreasing with the irradiance and that the main reason for this behavior comes from the increase of the open-circuit voltage with light intensity. Moreover, a dependency of the cell's ideality factor on the irradiance has to be assumed to rece…